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The IDH20G120C5XKSA1 is DIODE SCHOTTKY 1.2KV 56A TO220-2, that includes thinQ!? Series, they are designed to operate with a Schottky Silicon Carbide Diodes Product, Packaging is shown on datasheet note for use in a Tube, that offers Part Aliases features such as IDH20G120C5 SP001347054, Unit Weight is designed to work in 0.211644 oz, as well as the Through Hole Mounting Style, the device can also be used as TO-220-2 Package Case. In addition, the Technology is SiC, the device is offered in Through Hole Mounting Type, the device has a PG-TO220-2-1 of Supplier Device Package, and Configuration is Single, and the Speed is Fast Recovery = 200mA (Io), and Diode Type is Silicon Carbide Schottky, and the Current Reverse Leakage Vr is 123μA @ 1200V, and Voltage Forward Vf Max If is 1.8V @ 20A, and the Voltage DC Reverse Vr Max is 1200V (1.2kV), and Current Average Rectified Io is 56A (DC), and the Capacitance Vr F is 1050pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C, and the Pd Power Dissipation is 330 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Vf Forward Voltage is 1.5 V, and the Vr Reverse Voltage is 1.2 kV, and Ir Reverse Current is 8.5 uA, and the If Forward Current is 20 A, and Vrrm Repetitive Reverse Voltage is 1.2 kV, and the Ifsm Forward Surge Current is 198 A.
The IDH16S60C is Schottky Diodes & Rectifiers SiC Schottky Diode 600V 16A, that includes 600 V Vrrm Repetitive Reverse Voltage, they are designed to operate with a 1.5 V Vf Forward Voltage, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Technology features such as SiC, Series is designed to work in IDH16S60, as well as the Schottky Silicon Carbide Diodes Product, the device can also be used as 136 W Pd Power Dissipation. In addition, the Part Aliases is IDH16S60CAKSA1 IDH16S60CXK SP000797666, the device is offered in Tube Packaging, the device has a TO-220-2 of Package Case, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Ir Reverse Current is 2000 uA, and Ifsm Forward Surge Current is 118 A, and the If Forward Current is 16 A, and Configuration is Single.
The IDH16S60CAKSA1 is DIODE SCHOTTKY 600V 16A TO220-2, that includes 650pF @ 1V, 1MHz Capacitance Vr F, they are designed to operate with a 16A (DC) Current Average Rectified Io, Current Reverse Leakage Vr is shown on datasheet note for use in a 200μA @ 600V, that offers Diode Type features such as Silicon Carbide Schottky, Mounting Type is designed to work in Through Hole, it has an Operating Temperature Junction range of -55°C ~ 175°C, the device can also be used as TO-220-2 Package Case. In addition, the Packaging is Tube, the device is offered in 0ns Reverse Recovery Time trr, the device has a thinQ!? of Series, and Speed is No Recovery Time > 500mA (Io), and the Supplier Device Package is PG-TO220-2, and Voltage DC Reverse Vr Max is 600V, and the Voltage Forward Vf Max If is 1.7V @ 16A.
IDH20G65C5XKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TO-220-2 Package Case, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Technology features such as SiC, Product is designed to work in Schottky Silicon Carbide Diodes, as well as the IDH20G65C5 IDH20G65C5XK SP000925212 Part Aliases, the device can also be used as IDH20G65 Series. In addition, the Vrrm Repetitive Reverse Voltage is 650 V, the device is offered in 20 A If Forward Current, the device has a 157 W of Pd Power Dissipation, and Ifsm Forward Surge Current is 142 A, and the Unit Weight is 0.211644 oz.
