9icnet provides you with IPBD-08-D designed and produced by Samtec Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. IPBD-08-D price reference $2.38000. Samtec Inc. IPBD-08-D Package/Specification: POWER CABLE CONNECTOR. You can download IPBD-08-D english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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IPAW60R600CEXKSA1 with pin details, that includes Tube Packaging, they are designed to operate with a IPAW60R600CE SP001391618 Part Aliases, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 82 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and the Fall Time is 11 ns, and Rise Time is 8 ns, and the Vgs Gate Source Voltage is +/- 20 V, and Id Continuous Drain Current is 10.3 A, and the Vds Drain Source Breakdown Voltage is 600 V, and Vgs th Gate Source Threshold Voltage is 2.5 V, and the Rds On Drain Source Resistance is 1.4 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 58 ns, and Typical Turn On Delay Time is 10 ns, and the Qg Gate Charge is 20.5 nC, and Channel Mode is Enhancement.
IPAW60R280CEXKSA1 with user guide, that includes 2.5 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a +/- 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 600 V, that offers Typical Turn On Delay Time features such as 11 ns, Typical Turn Off Delay Time is designed to work in 71 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 9 ns Rise Time, the device has a 660 mOhms of Rds On Drain Source Resistance, and Qg Gate Charge is 43 nC, and the Pd Power Dissipation is 136 W, and Part Aliases is IPAW60R280CE SP001391614, and the Packaging is Tube, and Package Case is TO-220-3, and the Number of Channels is 1 Channel, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 40 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 19.3 A, and Fall Time is 9 ns, and the Configuration is 1 N-Channel, and Channel Mode is Enhancement.
IPAW60R380CEXKSA1 with circuit diagram, that includes Enhancement Channel Mode, they are designed to operate with a 1 N-Channel Configuration, Fall Time is shown on datasheet note for use in a 8 ns, that offers Id Continuous Drain Current features such as 15 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, the device can also be used as Through Hole Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in TO-220-3 Package Case, the device has a Tube of Packaging, and Part Aliases is IPAW60R380CE SP001391616, and the Pd Power Dissipation is 112 W, and Qg Gate Charge is 32 nC, and the Rds On Drain Source Resistance is 890 mOhms, and Rise Time is 9 ns, and the Technology is Si, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Typical Turn Off Delay Time is 56 ns, and the Typical Turn On Delay Time is 11 ns, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs Gate Source Voltage is +/- 20 V, and Vgs th Gate Source Threshold Voltage is 2.5 V.
IP-AWW-CU with EDA / CAD Models manufactured by IP. The IP-AWW-CU is available in MODULE Package, is part of the Module.
