NDS66PT5-16ET TR

High-speed CMOS SDR synchronous DRAM vetted with Insignis’ proprietary extended test flow to mitigate against early life failures, ensuring premium quality and long-term reliability for industrial use. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a bank activate command which is then followed by a read or write command.The SDRAM provides for programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either auto or self-refresh, are easy to use.By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth.<strong>Features:</strong> Available in 16 Mb, 64 Mb, 128 Mb, and 256 Mb capacities, AECQ-100 available, JEDEC standard drop-in replacement part, Operating temperature range Extended test (ET): 0°C to +70°C, Industrial (IT): -40°C to +85°C (up to +105°C available), Fast access time from clock, Fast clock rate, Internal pipelined architecture, Programmable mode registers, Auto refresh and self-refresh, CKE power down mode, Standard +3.3 V ±0.3 V power supply, Pb and halogen-free packaging, Enhanced quality due to Insignis’ proprietary extended test flow, which guarantees operation at elevated junction temperatures, Communication/monitoring, Remote/field monitoring equipment, Access control/security, Cameras, Metering, Automotive/transportation, Aviation, Rail, Marine, Driver information systems, Infotainment, Telecom/networking, Cellular antennas, Routers and switches, Network storage, Industrial, Factory automation, Gaming machines, Embedded control boards, Industrial PC, Medical, Printing