![NTR4003NT3G](https://uploads.9icnet.com/images/product/picture/318/338/7133905.jpg) | NTR4003NT3G | 安盛美 (onsemi) | 场效应管类型: n通道 漏源电压标 (Vdss): 30伏 漏源电流 (Id) @ 温度: 500毫安 (Ta) 最大功耗: 690mW (Ta) 供应商设备包装: SOT-23-3 (TO-236) 工作温度: -55摄氏度~150摄氏度(TJ) | ¥0.64462 |
![NTR4003NT1G](https://uploads.9icnet.com/images/product/picture/318/338/7134040.jpg) | NTR4003NT1G | 安盛美 (onsemi) | 场效应管类型: n通道 漏源电压标 (Vdss): 30伏 漏源电流 (Id) @ 温度: 500毫安 (Ta) 最大功耗: 690mW (Ta) 供应商设备包装: SOT-23-3 (TO-236) 工作温度: -55摄氏度~150摄氏度(TJ) | ¥0.2832 |
![NTR1P02T1G](https://uploads.9icnet.com/images/product/picture/318/338/7135008.jpg) | NTR1P02T1G | 安盛美 (onsemi) | 场效应管类型: P-通道 漏源电压标 (Vdss): 20伏 漏源电流 (Id) @ 温度: 1A(Ta) 最大功耗: 400mW (Ta) 供应商设备包装: SOT-23-3 (TO-236) 工作温度: -55摄氏度~150摄氏度(TJ) | ¥2.0877 |
![NTR5198NLT1G](https://uploads.9icnet.com/images/product/picture/318/338/7135013.jpg) | NTR5198NLT1G | 安盛美 (onsemi) | 场效应管类型: n通道 漏源电压标 (Vdss): 60 V 漏源电流 (Id) @ 温度: 1.7A(Ta) 最大功耗: 900mW (Ta) 供应商设备包装: SOT-23-3 (TO-236) 工作温度: -55摄氏度~150摄氏度(TJ) | ¥0.54829 |
![NTR4503NT1G](https://uploads.9icnet.com/images/product/picture/318/338/7135297.jpg) | NTR4503NT1G | 广东友台半导体 (UMW) | 场效应管类型: n通道 漏源电压标 (Vdss): 30伏 漏源电流 (Id) @ 温度: 1.5A(Ta) 最大功耗: 420mW (Ta) 供应商设备包装: SOT-23-3 (TO-236) 工作温度: -55摄氏度~150摄氏度(TJ) | ¥4.25593 |
![NTR4171PT1G(UMW)](https://uploads.9icnet.com/images/product/picture/nopic/nopic.jpg) | NTR4171PT1G(UMW) | 广东友台半导体 (UMW) | 暂无 | ¥0.5628 |
![NTR4171PT1G-VB](https://uploads.9icnet.com/images/product/picture/ok0/CXYGMOSFET/581332.jpg) | NTR4171PT1G-VB | | 类型:P沟道 漏源电压(Vdss):30V 连续漏极电流(Id):5.6A 导通电阻(RDS(on)@Vgs,Id):46mΩ@10V,5.6A | ¥0.69599 |
![NTR4003N](https://uploads.9icnet.com/images/product/picture/nopic/nopic.jpg) | NTR4003N | 萨科微 (Slkor) | | ¥0.1072 |
![NTRV4101P](https://uploads.9icnet.com/images/product/picture/nopic/nopic.jpg) | NTRV4101P | | | ¥0.46862 |
![NTR3A30PZ](https://uploads.9icnet.com/images/product/picture/nopic/nopic.jpg) | NTR3A30PZ | | | ¥0.77354 |