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MT25QU01GBBB8E12-0SIT

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 1Gb(128M x 8) 电源电压: 1.7伏~2伏 时钟频率: 166兆赫 供应商设备包装: 24-T-PBGA (6x8)
  • 品牌: 镁光 (Micron)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 696
  • 单价: ¥63.01613
  • 数量:
    - +
  • 总计: ¥63.02
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规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 储存接口 串行外设接口
  • 存储格式 FLASH
  • 访达时期 -
  • 技术 FLASH-NOR
  • 时钟频率 166兆赫
  • 制造厂商 镁光 (Micron)
  • 电源电压 1.7伏~2伏
  • 包装/外壳 24-TBGA
  • 存储容量 1Gb(128M x 8)
  • 单字、单页写入耗时 8ms, 2.8ms
  • 供应商设备包装 24-T-PBGA (6x8)

MT25QU01GBBB8E12-0SIT 产品详情

Features:
• Stacked device (two 512Mb die)
• SPI-compatible serial bus interface
• Single and double transfer rate (STR/DTR)
• Clock frequency
– 166 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
• Dual/quad I/O commands for increased throughput
   up to 90 MB/s
• Supported protocols: Extended, Dual and Quad I/O
   both STR and DTR
• Execute-in-place (XIP)
• PROGRAM/ERASE SUSPEND operations
• Volatile and nonvolatile configuration settings
• Software reset
• Additional reset pin for selected part numbers
• 3-byte and 4-byte address modes – enable memory
   access beyond 128Mb
• Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
• Erase capability
– Die erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
• Erase performance: 400KB/sec (64KB sector)
• Erase performance: 80KB/sec (4KB sub-sector)
• Program performance: 2MB/sec
• Security and write protection
– Volatile and nonvolatile locking and software
   write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
   (BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature (BB21h)
– Extended device ID: two additional bytes identify
   device factory options
• JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
   Options Marking
• Voltage
– 1.7–2.0V U
• Density
– 1Gb 01G
• Device stacking
– 2 die stacked B
• Device generation B
• Die revision B
• Pin configuration
– HOLD# 1
– RESET and HOLD# 8
• Sector Size
– 64KB E
• Packages – JEDEC-standard, RoHScompliant
– 24-ball T-PBGA 05/6mm x 8mm
   (TBGA24)
   12
– 16-pin SOP2, 300 mils
   (SO16W, SO16-Wide, SOIC-16)
   SF
– W-PDFN-8 8mm x 6mm (MLP8 8mmx 6mm)
   W9
• Security features
– Standard security 0
• Special options
– Standard S
– Automotive A
• Operating temperature range
– From –40°C to +85°C IT
– From –40°C to +105°C AT
– From –40°C to +125°C UT
   1Gb, 1.8V Multiple I/O Serial Flash Memory


(Picture: Pinout)


MT25QU01GBBB8E12-0SIT所属分类:存储器,MT25QU01GBBB8E12-0SIT 由 镁光 (Micron) 设计生产,可通过久芯网进行购买。MT25QU01GBBB8E12-0SIT价格参考¥63.016127,你可以下载 MT25QU01GBBB8E12-0SIT中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询MT25QU01GBBB8E12-0SIT规格参数、现货库存、封装信息等信息!

镁光 (Micron)

镁光 (Micron)

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