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GS8640Z36GT-250I
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GS8640Z36GT-250I

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 72Mb (2M x 36) 电源电压: 2.3V ~ 2.7V, 3V ~ 3.6V 时钟频率: 250兆赫 供应商设备包装: 100-TQFP(20x14)
  • 品牌: 德国重离子研究中心 (GSI)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 18

数量 单价 合计
18+ 765.64695 13781.64526
  • 库存: 0
  • 单价: ¥765.64696
  • 数量:
    - +
  • 总计: ¥13,781.65
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规格参数

  • 部件状态 可供货
  • 存储类型 Volatile
  • 储存接口 并联
  • 单字、单页写入耗时 -
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 访达时期 -
  • 存储格式 SRAM
  • 包装/外壳 100-LQFP
  • 存储容量 72Mb (2M x 36)
  • 时钟频率 250兆赫
  • 制造厂商 德国重离子研究中心 (GSI)
  • 技术 SRAM-同步,ZBT
  • 电源电压 2.3V ~ 2.7V, 3V ~ 3.6V
  • 供应商设备包装 100-TQFP(20x14)

GS8640Z36GT-250I 产品详情

Features
· NBT(No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAMTM, NoBLTM and ZBTTM SRAMs
·2.5 V or 3.3 V+10%/-10% core power supply
·2.5 V or 3.3 V I/O supply
· User-configurable Pipeline and Flow Through mode
· LBO pin for Linear or Interleave Burst mode
· Pin compatible with 4Mb,9Mb,18Mb and 36Mb devices
· Byte write operation(9-bit Bytes)
·3 chip enable signals for easy depth expansion
· ZZ Pin for automatic power-down
· JEDEC-standard 100-lead TQFP package

· RoHS-compliant 100-lead TQFP package available

Functional Description 

The GS8640Z18/36T is a 72Mbit Synchronous Static SRAM.GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.

Because it is a synchronous device,address,data inputs,and read/write control inputs are captured on the rising edge of the input clock.Burst order control(LBO)must be tied to a power rail for proper operation.Asynchronous inputs include the Sleep mode enable(ZZ)and Output Enable.Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time.Write cycles are internally self-timed and initiated by the rising edge of the clock input.This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.
The GS8640Z18/36T may be configured by the user to operate in Pipeline or Flow Through mode.Operating as a pipelined synchronous device,meaning that in addition to the rising edge triggered registers that capture input signals,the device incorporates a rising-edge-triggered output register.For read cycles,pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle andthen released to the output drivers at the next rising edge of clock.
The GS8640Z18/36T is implemented with GSI's high performance CMOS technology and is available in a JEDEC-standard 100-pin TQFP package.


(Picture:Pinout / Diagram)

GS8640Z36GT-250I所属分类:存储器,GS8640Z36GT-250I 由 德国重离子研究中心 (GSI) 设计生产,可通过久芯网进行购买。GS8640Z36GT-250I价格参考¥765.646959,你可以下载 GS8640Z36GT-250I中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询GS8640Z36GT-250I规格参数、现货库存、封装信息等信息!
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