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MT29F64G08CBAAAWP-Z:A
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MT29F64G08CBAAAWP-Z:A

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 64Gb (8G x 8) 电源电压: 2.7伏~3.6伏 供应商设备包装: 48-TSOP I
  • 品牌: 镁光 (Micron)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥46.03587
  • 数量:
    - +
  • 总计: ¥46.04
在线询价

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规格参数

  • 储存接口 并联
  • 单字、单页写入耗时 -
  • 存储类型 Non-Volatile
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 时钟频率 -
  • 访达时期 -
  • 电源电压 2.7伏~3.6伏
  • 工作温度 0摄氏度~70摄氏度(TA)
  • 包装/外壳 48-TFSOP (0.724", 18.40毫米 Width)
  • 制造厂商 镁光 (Micron)
  • 技术 FLASH-NAND
  • 部件状态 过时的
  • 供应商设备包装 48-TSOP I
  • 存储容量 64Gb (8G x 8)

MT29F64G08CBAAAWP-Z:A 产品详情

Micron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

Feature


• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5

tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
• RESET (FFh) required as first command after power
on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

MT29F64G08CBAAAWP-Z:A所属分类:存储器,MT29F64G08CBAAAWP-Z:A 由 镁光 (Micron) 设计生产,可通过久芯网进行购买。MT29F64G08CBAAAWP-Z:A价格参考¥46.035872,你可以下载 MT29F64G08CBAAAWP-Z:A中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询MT29F64G08CBAAAWP-Z:A规格参数、现货库存、封装信息等信息!

镁光 (Micron)

镁光 (Micron)

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