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The FCH22N60N is MOSFET SUPREMOS 22A-TO247, that includes Tube Packaging, they are designed to operate with a 0.225401 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-247-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 205 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, and Fall Time is 4 ns, and the Rise Time is 16.7 ns, and Vgs Gate Source Voltage is +/- 30 V, and the Id Continuous Drain Current is 22 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 140 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 45 nC, and the Forward Transconductance Min is 22 S.
The FCH2-A-C14 is CABLE MNT ADH FOAM GRAY .25", that includes 26.16 mm Width, they are designed to operate with a 3 lbs Unit Weight, Type is shown on datasheet note for use in a Single Opening, that offers Size Dimension features such as 2.48" L x 1.03" W (63.0mm x 26.2mm), Qualification is designed to work in Commercial, as well as the Bulk Packaging, the device can also be used as Adhesive Mounting Method. In addition, the Mounting Type is Screw, #6, Adhesive, the device is offered in Nylon Material, the device has a 62.99 mm of Length, and Height is 6.35 mm, and the Features is Adhesive Backed Latching Flat Cable Holder, and Family is Latching Flat Cable Holder, and the Color is Gray.
The FCH25N60N is MOSFET N-CH 600V 25A TO-247, that includes 25 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Number of Channels features such as 1 Channel, Package Case is designed to work in TO-247-3, as well as the Tube Packaging, the device can also be used as 216 W Pd Power Dissipation. In addition, the Rds On Drain Source Resistance is 108 mOhms, the device is offered in Si Technology, the device has a N-Channel of Transistor Polarity, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.225401 oz, and Vds Drain Source Breakdown Voltage is 600 V.
