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The FCH22N60N is MOSFET SUPREMOS 22A-TO247, that includes Tube Packaging, they are designed to operate with a 0.225401 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-247-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 205 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, and Fall Time is 4 ns, and the Rise Time is 16.7 ns, and Vgs Gate Source Voltage is +/- 30 V, and the Id Continuous Drain Current is 22 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 140 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 45 nC, and the Forward Transconductance Min is 22 S.
The FCH25N60N is MOSFET N-CH 600V 25A TO-247, that includes 600 V Vds Drain Source Breakdown Voltage, they are designed to operate with a 0.225401 oz Unit Weight, Transistor Type is shown on datasheet note for use in a 1 N-Channel, that offers Transistor Polarity features such as N-Channel, Technology is designed to work in Si, as well as the 108 mOhms Rds On Drain Source Resistance, the device can also be used as 216 W Pd Power Dissipation. In addition, the Packaging is Tube, the device is offered in TO-247-3 Package Case, the device has a 1 Channel of Number of Channels, and Mounting Style is Through Hole, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 25 A.
FCH20UC16 with circuit diagram manufactured by SHIDENGEN. The FCH20UC16 is available in TO-220F Package, is part of the IC Chips.
