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The SPP12N50C3XKSA1 is MOSFET N-Ch 560V 11.6A TO220-3, that includes SPP12N50 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a SP000681048 SPP12N50C3 SPP12N50C3XK, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 125 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns, and the Rise Time is 8 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 11.6 A, and Vds Drain Source Breakdown Voltage is 560 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 380 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 45 ns, and the Typical Turn On Delay Time is 10 ns, and Qg Gate Charge is 49 nC, and the Forward Transconductance Min is 8 S.
SPP11N8C3 with user guide manufactured by Infineon. The SPP11N8C3 is available in TO3 Package, is part of the IC Chips.
The SPP12N50C3 is MOSFET N-CH 560V 11.6A TO-220 manufactured by INF. The SPP12N50C3 is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 560V 11.6A TO-220.
SPP12N60C3 with EDA / CAD Models manufactured by INF. The SPP12N60C3 is available in TO-262 Package, is part of the IC Chips.