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The SPP16N50C3XKSA1 is MOSFET N-Ch 560V 16A TO220-3, that includes SPP16N50 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a SP000681056 SPP16N50C3 SPP16N50C3XK, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 160 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns, and the Rise Time is 8 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 16 A, and Vds Drain Source Breakdown Voltage is 560 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 280 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 50 ns, and the Typical Turn On Delay Time is 10 ns, and Qg Gate Charge is 66 nC, and the Forward Transconductance Min is 14 S.
The SPP15P10PL H is MOSFET P-Ch -100V -15A TO220-3, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a - 100 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Typical Turn On Delay Time features such as 7.6 ns, Typical Turn Off Delay Time is designed to work in 50 ns, as well as the 1 P-Channel Transistor Type, the device can also be used as P-Channel Transistor Polarity. In addition, the Tradename is SIPMOS, the device is offered in Si Technology, the device has a SPP15P10 of Series, and Rise Time is 21 ns, and the Rds On Drain Source Resistance is 200 mOhms, and Qg Gate Charge is 47 nC, and the Pd Power Dissipation is 128 W, and Part Aliases is SP000683162 SPP15P10PLHXK SPP15P10PLHXKSA1, and the Packaging is Tube, and Package Case is TO-220-3, and the Number of Channels is 1 Channel, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Id Continuous Drain Current is - 15 A, and Forward Transconductance Min is 11 S, and the Fall Time is 29 ns, and Configuration is Single, and the Channel Mode is Enhancement.
The SPP16N50C3 is MOSFET N-Ch 560V 16A TO220-3 CoolMOS C3, that includes Enhancement Channel Mode, they are designed to operate with a Single Configuration, Fall Time is shown on datasheet note for use in a 8 ns, that offers Id Continuous Drain Current features such as 16 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as Through Hole Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in TO-220-3 Package Case, the device has a Tube of Packaging, and Part Aliases is SP000681056 SPP16N50C3HKSA1 SPP16N50C3XK SPP16N50C3XKSA1, and the Pd Power Dissipation is 160 W, and Rds On Drain Source Resistance is 280 mOhms, and the Rise Time is 8 ns, and Series is CoolMOS C3, and the Technology is Si, and Tradename is CoolMOS, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Typical Turn Off Delay Time is 50 ns, and Typical Turn On Delay Time is 10 ns, and the Unit Weight is 0.211644 oz, and Vds Drain Source Breakdown Voltage is 560 V, and the Vgs Gate Source Voltage is 20 V.
