The SPP20N60CFD,20N60CFD parts manufactured by INFINEON are available for purchase at 9icnet Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The SPP20N60CFD,20N60CFD components of 9icnet Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
The production status marked on 9icnet.com is for reference only. If you didn't find what you were looking for, you can get more valuable information by emails, such as the SPP20N60CFD,20N60CFD Inventory quantity, preferential price, datasheet, and manufacturer. We are always happy to hear from you, so feel free to contact us.
The SPP20N60C3XKSA1 is MOSFET N-Ch 650V 20.7A TO220-3, that includes SPP20N60 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a SP000681058 SPP20N60C3 SPP20N60C3XK, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 208 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 4.5 ns, and the Rise Time is 5 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 20.7 A, and Vds Drain Source Breakdown Voltage is 650 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 190 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 67 ns, and the Typical Turn On Delay Time is 10 ns, and Qg Gate Charge is 87 nC, and the Forward Transconductance Min is 17.5 S.
The SPP20N60CFD is MOSFET N-Ch 650V 20.7A TO220-3 CoolMOS CFD, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 650 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Typical Turn On Delay Time features such as 12 ns, Typical Turn Off Delay Time is designed to work in 59 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Tradename is CoolMOS, the device is offered in Si Technology, the device has a CoolMOS CFD of Series, and Rise Time is 15 ns, and the Rds On Drain Source Resistance is 220 mOhms, and Pd Power Dissipation is 208 W, and the Part Aliases is SP000681060 SPP20N60CFDHKSA1 SPP20N60CFDXK SPP20N60CFDXKSA1, and Packaging is Tube, and the Package Case is TO-220-3, and Number of Channels is 1 Channel, and the Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 20.7 A, and the Fall Time is 6.4 ns, and Configuration is Single, and the Channel Mode is Enhancement.
The SPP20N60C3 is MOSFET N-CH 650V 20.7A TO-220, that includes Enhancement Channel Mode, they are designed to operate with a Single Configuration, Fall Time is shown on datasheet note for use in a 4.5 ns, that offers Id Continuous Drain Current features such as 20.7 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as Through Hole Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in TO-220-3 Package Case, the device has a Tube of Packaging, and Part Aliases is SP000681058 SPP20N60C3HKSA1 SPP20N60C3XK SPP20N60C3XKSA1, and the Pd Power Dissipation is 208 W, and Rds On Drain Source Resistance is 190 mOhms, and the Rise Time is 5 ns, and Series is CoolMOS C3, and the Technology is Si, and Tradename is CoolMOS, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Typical Turn Off Delay Time is 67 ns, and Typical Turn On Delay Time is 10 ns, and the Unit Weight is 0.211644 oz, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs Gate Source Voltage is 20 V.
SPP20N60C3(20N60C3) with EDA / CAD Models manufactured by INFINEON. The SPP20N60C3(20N60C3) is available in TO-220 Package, is part of the IC Chips.
